voltage curve meaning in Chinese
电压曲线
Examples
- The conductance - voltage curve is obtained under taking into account the coulomb interaction in the dot , also its physics meanings are discussed
考虑量子点上的库仑相互作用，得到了电导门压的共振隧穿曲线，并讨论其物理意义。 - The second chapter is about model experiment study , it introduces purpose , scheme , equipment and experiment contents having copperplate and copper ball as object by comparability rule experimenting plenty of physical models , deals with experiment data and makes second field attenuation voltage curves first field isoline both single aperture and mutli - aperture in different situation . in the end , it obtains best depth of multi - aperture source
利用相似性准则进行大量的物理模拟实验，实验观测中以铜板和铜球作为目标体，详细介绍了模拟实验研究的目的、方案、使用设备以及实验内容，并对实验数据进行了处理分析，作出了不同模拟条件下单、多孔径的二次场衰减电压曲线和一次场等值线图，找出多孔径作发射源的探测最佳深度。 - Based on sndm technique , a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed . the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed , and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed . the dynamic switching of ferroelectric domain in ca doping ( pb , la ) tio3 thin film was studied by sndm from the view of electricity
利用sndm ,从纯电学的角度观察了plct薄膜中的电畴动态反转过程,由电畴横向扩张的移动速度的降低,发现了晶界在电畴反转过程中对畴壁移动的阻挡作用;根据sndm和pfm的在垂直方向上的不同信息敏感深度,得到plct薄膜中电畴反转过程中电畴是楔形畴;用pfm观察同一电畴在去掉外加反转电场后电畴的极化弛豫现象,结果表明空间电荷是发生极化弛豫的主要原因。